In a groundbreaking collaboration between research institutions, a team of scientists from CIC nanoGUNE’s Nanodevices group, the Charles University of Prague, and the CFM (CSIC-UPV/EHU) center has unveiled a new complex material with remarkable properties in the realm of spintronics. This discovery, detailed in a publication in Nature Materials, has the potential to pave the way for a new generation of electronic devices that are more efficient and advanced, particularly those that incorporate magnetic memories into processors.
The exploration of two-dimensional materials with distinct characteristics has gained significant traction in the scientific community due to the emergence of novel effects when multiple layers of these materials are layered to create a heterostructure. Recent studies have indicated that subtle rotations of these layers can have a profound impact on the properties of the resulting heterostructure. The team’s investigation focused on the stacking of two layers of graphene and tungsten selenide (WSe2), with promising outcomes.
Traditionally, spin (a fundamental property of electrons and other particles) is transferred perpendicularly to the direction of electric current. This characteristic poses a challenge in spintronics, where the goal is to leverage spin for information storage, processing, and transfer. However, the team’s research reveals a remarkable breakthrough – by precisely aligning the two layers of materials and introducing a specific rotation angle, a spin current can be induced in a predetermined direction. This discovery challenges the conventional limitations of spintronics and opens up new avenues for leveraging spin-related properties.
The implications of this research are profound, offering a glimpse into the transformative potential of manipulating two-dimensional materials in the realm of spintronics. By exploiting the ‘magic’ twist achieved through the precise stacking of materials, researchers can unlock unprecedented spin-related properties that were previously inaccessible. This breakthrough not only expands our understanding of spin currents but also catalyzes the development of innovative electronic devices that harness these unique properties for enhanced performance and efficiency.
The collaborative efforts of the research team have culminated in a groundbreaking discovery that has the potential to revolutionize the field of spintronics. By strategically stacking two-dimensional materials and introducing controlled rotations, novel spin-related properties can be harnessed, leading to the development of next-generation electronic devices with unparalleled capabilities. The research opens up a new chapter in the exploration of spin currents and paves the way for future advancements in the field of nanoelectronics.
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